FQP5N50C

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Mfr.Part #
FQP5N50C
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 5A TO220-3
Stock
34,507
In Stock :
34,507

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
73W Tc
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Drain to Source Voltage (Vdss) :
500V
Configuration :
SINGLE WITH BUILT-IN DIODE
Surface Mount :
No
Series :
QFET®
Current - Continuous Drain (Id) @ 25°C :
5A Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
TO-220-3
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Pin Count :
3
JESD-30 Code :
R-PSFM-T3
Qualification Status :
COMMERCIAL
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
20A
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Reach Compliance Code :
Unknown
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Packaging :
Tube
Terminal Position :
Single
Input Capacitance (Ciss) (Max) @ Vds :
625pF @ 25V
Rds On (Max) @ Id, Vgs :
1.4 Ω @ 2.5A, 10V
Vgs (Max) :
±30V
Operating Temperature :
-55°C~150°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Finish :
MATTE TIN
Number of Terminations :
3
Drain Current-Max (Abs) (ID) :
5A
Mounting Type :
Through Hole
DS Breakdown Voltage-Min :
500V
Number of Elements :
1
Avalanche Energy Rating (Eas) :
300 mJ
JEDEC-95 Code :
TO-220AB
Transistor Element Material :
SILICON
Datasheets
FQP5N50C
Introducing Transistors - FETs, MOSFETs - Single onsemi FQP5N50C from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, FQP5N50C pinout, FQP5N50C datasheet PDF, FQP5N50C amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQP5N50C ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQP5N50C


N-Channel Tube 1.4 Ω @ 2.5A, 10V ±30V 625pF @ 25V 24nC @ 10V 500V TO-220-3

FQP5N50C Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 625pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [5A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 20A.The DS breakdown voltage should be maintained above 500V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

FQP5N50C Features


the avalanche energy rating (Eas) is 300 mJ
based on its rated peak drain current 20A.
a 500V drain to source voltage (Vdss)


FQP5N50C Applications


There are a lot of Rochester Electronics, LLC
FQP5N50C applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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