FQP5N30

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Mfr.Part #
FQP5N30
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 300V 5.4A TO220-3
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drain Current-Max (Abs) (ID) :
5.4A
Pbfree Code :
yes
JESD-30 Code :
R-PSFM-T3
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
0.9Ohm
Series :
QFET®
Number of Terminations :
3
Vgs(th) (Max) @ Id :
5V @ 250μA
Terminal Finish :
MATTE TIN
Operating Temperature :
-55°C~150°C TJ
Configuration :
SINGLE WITH BUILT-IN DIODE
Operating Mode :
ENHANCEMENT MODE
Reach Compliance Code :
Unknown
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Terminal Position :
Single
Avalanche Energy Rating (Eas) :
340 mJ
Package / Case :
TO-220-3
Pin Count :
3
JESD-609 Code :
e3
Current - Continuous Drain (Id) @ 25°C :
5.4A Tc
Peak Reflow Temperature (Cel) :
Not Applicable
Vgs (Max) :
±30V
Power Dissipation-Max :
70W Tc
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
300V
Input Capacitance (Ciss) (Max) @ Vds :
430pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Mounting Type :
Through Hole
Number of Elements :
1
Qualification Status :
COMMERCIAL
Rds On (Max) @ Id, Vgs :
900m Ω @ 2.7A, 10V
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Drive Voltage (Max Rds On,Min Rds On) :
10V
Surface Mount :
No
Pulsed Drain Current-Max (IDM) :
21.6A
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-220AB
DS Breakdown Voltage-Min :
300V
Transistor Application :
SWITCHING
Datasheets
FQP5N30
Introducing Transistors - FETs, MOSFETs - Single onsemi FQP5N30 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, FQP5N30 pinout, FQP5N30 datasheet PDF, FQP5N30 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQP5N30 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQP5N30


N-Channel Tube 900m Ω @ 2.7A, 10V ±30V 430pF @ 25V 13nC @ 10V 300V TO-220-3

FQP5N30 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 340 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 430pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 5.4A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 21.6A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 300V in order to maintain normal operation.Operating this transistor requires a 300V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

FQP5N30 Features


the avalanche energy rating (Eas) is 340 mJ
based on its rated peak drain current 21.6A.
a 300V drain to source voltage (Vdss)


FQP5N30 Applications


There are a lot of Rochester Electronics, LLC
FQP5N30 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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