FQP4N90C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

4A

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

900V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Voltage - Rated DC :

900V

Avalanche Energy Rating (Eas) :

570 mJ

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Qualification Status :

Not Qualified

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Power Dissipation-Max :

140W Tc

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Power Dissipation :

140W

Input Capacitance (Ciss) (Max) @ Vds :

960pF @ 25V

Width :

4.5mm

Fall Time (Typ) :

35 ns

Turn On Delay Time :

25 ns

Rise Time :

50ns

Weight :

1.8g

Transistor Element Material :

SILICON

Number of Terminations :

3

Number of Elements :

1

Factory Lead Time :

8 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Published :

2013

Vgs(th) (Max) @ Id :

5V @ 250μA

Current Rating :

4A

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

9.2mm

Vgs (Max) :

±30V

Length :

9.9mm

Packaging :

Tube

Threshold Voltage :

5V

Series :

QFET®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

4.2 Ω @ 2A, 10V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

40 ns