FQP4N20L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

3.8A

Package / Case :

TO-220-3

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Factory Lead Time :

4 Weeks

Power Dissipation-Max :

45W Tc

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Fall Time (Typ) :

40 ns

Voltage - Rated DC :

200V

Power Dissipation :

45W

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

15 ns

ECCN Code :

EAR99

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

3.8A Tc

FET Type :

N-Channel

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Drain to Source Breakdown Voltage :

200V

Avalanche Energy Rating (Eas) :

52 mJ

Rise Time :

70ns

Series :

QFET®

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 25V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

1.35 Ω @ 1.9A, 10V

Vgs (Max) :

±20V

Mount :

Through Hole

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

2V @ 250μA

Weight :

1.8g

JEDEC-95 Code :

TO-220AB

Turn On Delay Time :

7 ns

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

3.6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Current Rating :

3.8A