FQP45N15V2
- Mfr.Part #
- FQP45N15V2
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 45A TO220-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 30V
- Pbfree Code :
- yes
- Width :
- 4.7mm
- Nominal Vgs :
- 4 V
- Voltage - Rated DC :
- 150V
- Current Rating :
- 45A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 94nC @ 10V
- Rise Time :
- 232ns
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 3030pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Termination :
- Through Hole
- Element Configuration :
- Single
- Published :
- 2013
- Resistance :
- 40mOhm
- Number of Terminations :
- 3
- Current :
- 45A
- Factory Lead Time :
- 5 Weeks
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 22.5A, 10V
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 45A
- Fall Time (Typ) :
- 246 ns
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 45A Tc
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Turn On Delay Time :
- 22 ns
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-220-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 224 ns
- Power Dissipation-Max :
- 220W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Power Dissipation :
- 220W
- Length :
- 10.1mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- QFET®
- Lead Free :
- Lead Free
- Voltage :
- 150V
- Threshold Voltage :
- 4V
- Dual Supply Voltage :
- 150V
- Drain to Source Breakdown Voltage :
- 150V
- Mount :
- Through Hole
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- Height :
- 9.4mm
- JESD-609 Code :
- e3
- JEDEC-95 Code :
- TO-220AB
- Datasheets
- FQP45N15V2

N-Channel Tube 40m Ω @ 22.5A, 10V ±30V 3030pF @ 25V 94nC @ 10V TO-220-3
FQP45N15V2 Description
This N-channel enhanced power MOSFET is produced using on Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, audio amplifiers, DC motor control and variable switching power applications.
FQP45N15V2 Features
45A, 150V, RDS(on) = 40mΩ(Max.) @VGS = 10 V, ID = 22.5A
Low gate charge ( Typ. 72nC)
Low Crss ( Typ. 135pF)
100% avalanche tested
175 ° C maximum junction temperature rating
FQP45N15V2 Applications
Other Industrial
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