FQP4N90
- Mfr.Part #
- FQP4N90
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 4.2A TO220-3
- Stock
- 914
- In Stock :
- 914
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 4A
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- Power Dissipation :
- 140W
- Continuous Drain Current (ID) :
- 4A
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 140W Tc
- Series :
- QFET®
- Weight :
- 1.8g
- Threshold Voltage :
- 5V
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 4.2 Ω @ 2A, 10V
- FET Type :
- N-Channel
- Rise Time :
- 50ns
- Turn-Off Delay Time :
- 40 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Length :
- 9.9mm
- JEDEC-95 Code :
- TO-220AB
- Published :
- 2013
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 570 mJ
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 25 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- Drain to Source Breakdown Voltage :
- 900V
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Width :
- 4.5mm
- Voltage - Rated DC :
- 900V
- Gate to Source Voltage (Vgs) :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 960pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 35 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Height :
- 9.2mm
- Package / Case :
- TO-220-3
- Current Rating :
- 4A
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Datasheets
- FQP4N90

N-Channel Tube 4.2 Ω @ 2A, 10V ±30V 960pF @ 25V 22nC @ 10V TO-220-3
FQP4N90C Description
This N-channel enhanced power MOSFET FQP4N90C is produced using Fairchild's proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specially tailored to reduce on-resistance, provide excellent switching performance and high avalanche energy. These devices are suitable for switching mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
FQP4N90C Features
4.0A,900VRps(on)=4.2Ω(Max.)@VGs=10 V1p=2.0 A
Low Gate Charge(Typ.17nC)
Low Crss(Typ.5.6pF)
100% Avalanche Tested
FQP4N90C Applications
switching mode power supplies
active power factor correction (PFC)
electronic lamp ballasts
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