FQP4N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

45ns

Published :

2000

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

500V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

500V

Current - Continuous Drain (Id) @ 25°C :

3.4A Tc

Turn-Off Delay Time :

20 ns

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

70W Tc

Packaging :

Tube

Supplier Device Package :

TO-220-3

Power Dissipation :

70W

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 25V

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

2.7Ohm @ 1.7A, 10V

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Current Rating :

3.4A

Element Configuration :

Single

Series :

QFET®

Vgs (Max) :

±30V

Drain to Source Resistance :

2.7Ohm

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

5V @ 250μA

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Fall Time (Typ) :

30 ns

Rds On Max :

2.7 Ω

Mount :

Through Hole

Number of Elements :

1

Continuous Drain Current (ID) :

3.4A

Input Capacitance :

460pF

Drain to Source Breakdown Voltage :

500V

Lead Free :

Lead Free

Mounting Type :

Through Hole