FQP22P10
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- Mfr.Part #
- FQP22P10
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 22A TO220-3
- Stock
- 88,047
- In Stock ：
- 88,047
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Supplier Device Package :
- TO-220-3
- Series :
- QFET®
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 125mOhm @ 11A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- P-Channel
- Package / Case :
- TO-220-3
- Published :
- 2002
- Power Dissipation-Max :
- 125W Tc
- Drain to Source Voltage (Vdss) :
- 100V
- Vgs (Max) :
- ±30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1500pF @ 25V
- Datasheets
- FQP22P10
P-Channel Tube 125mOhm @ 11A, 10V ±30V 1500pF @ 25V 50nC @ 10V 100V TO-220-3
FQP22P10 Description
These P-channel enhanced mode power field effect transistors are produced by Xiantong's proprietary planar stripe DMOS technology. This advanced technology is specifically tailored to minimize on-resistance, provide excellent switching performance, and withstand high-energy pulses in avalanche and rectifier modes. These devices are ideal for low-voltage applications such as audio amplifiers, high-efficiency switching DC/DC converters and DC motor controls.
FQP22P10 Features
? -22A, -100V, RDS(on) = 0.125? @VGS = -10 V
? Low gate charge ( typical 40 nC)
? Low Crss ( typical 160 pF)
? Fast switching
? 100% avalanche tested
? Improved dv/dt capability
? 175°C maximum junction temperature rating
FQP22P10 Applications
audio amplifiers
high-efficiency switching DC
DC converters
DC motor controls
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