FQP20N06
- Mfr.Part #
- FQP20N06
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 20A TO220-3
- Stock
- 16,695
- In Stock :
- 16,695
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 10A, 10V
- Number of Pins :
- 3
- Packaging :
- Tube
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Voltage - Rated DC :
- 60V
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Threshold Voltage :
- 4V
- Turn-Off Delay Time :
- 20 ns
- Resistance :
- 70mOhm
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-220-3
- Current Rating :
- 20A
- Pulsed Drain Current-Max (IDM) :
- 80A
- Vgs (Max) :
- ±25V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rise Time :
- 45ns
- Height :
- 9.4mm
- Drain to Source Breakdown Voltage :
- 60V
- Factory Lead Time :
- 5 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 590pF @ 25V
- Series :
- QFET®
- Fall Time (Typ) :
- 20 ns
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 20A
- Gate to Source Voltage (Vgs) :
- 25V
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 53W
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Power Dissipation-Max :
- 53W Tc
- Published :
- 2013
- Length :
- 10.1mm
- Turn On Delay Time :
- 5 ns
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- Width :
- 4.7mm
- JEDEC-95 Code :
- TO-220AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- REACH SVHC :
- No SVHC
- Weight :
- 1.8g
- Datasheets
- FQP20N06

N-Channel Tube 60m Ω @ 10A, 10V ±25V 590pF @ 25V 15nC @ 10V TO-220-3
FQP20N06 Description
Utilizing the exclusive planar stripe and DMOS technology of Fairchild Semiconductor, this N-Channel enhancement mode power MOSFET was created. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. These components are appropriate for applications requiring switched mcxje power supply, audio amplification, DC motor control, and variable switching power.
FQP20N06 Features
? Saves Board Space with SOT-23 Surface Mount Package
? AEC-Q101 qualified and PPAP capable; BV Prefix for Automotive and Other Applications Requiring Special Site and Control Change Requirements
? These devices are RoHS compliant and Pb-free.
FQP20N06 Applications
Switching applications
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