FQP27P06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

90 ns

Operating Temperature :

-55°C~175°C TJ

Width :

9.9mm

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

-4V

RoHS Status :

ROHS3 Compliant

Height :

6.35mm

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

JESD-609 Code :

e3

Vgs (Max) :

±25V

Gate to Source Voltage (Vgs) :

25V

Voltage - Rated DC :

-60V

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Dual Supply Voltage :

-60V

Rise Time :

185ns

Transistor Application :

SWITCHING

Number of Terminations :

3

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Power Dissipation-Max :

120W Tc

Number of Elements :

1

Transistor Element Material :

SILICON

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

70m Ω @ 13.5A, 10V

FET Type :

P-Channel

Factory Lead Time :

6 Weeks

Nominal Vgs :

-4 V

Lead Free :

Lead Free

Mounting Type :

Through Hole

Turn-Off Delay Time :

30 ns

Number of Pins :

3

Turn On Delay Time :

18 ns

Resistance :

70mOhm

Published :

1999

Contact Plating :

Tin

Avalanche Energy Rating (Eas) :

560 mJ

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Current Rating :

-27A

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-220AB

Series :

QFET®

Weight :

1.8g

Package / Case :

TO-220-3

Length :

6.35mm

Power Dissipation :

120W

Continuous Drain Current (ID) :

-27A

Drain to Source Breakdown Voltage :

-60V

ECCN Code :

EAR99

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

27A Tc