FQD3P50TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

250 mJ

Rds On (Max) @ Id, Vgs :

4.9 Ω @ 1.05A, 10V

Voltage - Rated DC :

-500V

Series :

QFET®

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-500V

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 25V

Element Configuration :

Single

Voltage :

400V

Current - Continuous Drain (Id) @ 25°C :

2.1A Tc

Number of Terminations :

2

Width :

6.22mm

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Fall Time (Typ) :

45 ns

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

JESD-30 Code :

R-PSSO-G2

Current Rating :

-2.1A

Threshold Voltage :

-5V

Max Junction Temperature (Tj) :

150°C

Rise Time :

56ns

Packaging :

Tape and Reel (TR)

Factory Lead Time :

8 Weeks

Power Dissipation :

2.5W

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.5W Ta 50W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

500V

Mount :

Surface Mount

Radiation Hardening :

No

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Height :

2.517mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Pins :

3

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

12 ns

Lead Free :

Lead Free

Published :

2000

Gate to Source Voltage (Vgs) :

30V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Number of Elements :

1

Pbfree Code :

yes

Continuous Drain Current (ID) :

-2.1A

Length :

6.73mm

Turn-Off Delay Time :

35 ns

Resistance :

4.9Ohm

FET Type :

P-Channel

Current :

18A

Number of Channels :

1