FQD3N40TF
- Mfr.Part #
- FQD3N40TF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 2A DPAK
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Pbfree Code :
- yes
- Number of Terminations :
- 2
- JESD-30 Code :
- R-PSSO-G2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- Drain Current-Max (Abs) (ID) :
- 2A
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- QFET®
- Reach Compliance Code :
- Unknown
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 230pF @ 25V
- Surface Mount :
- yes
- Rds On (Max) @ Id, Vgs :
- 3.4 Ω @ 1A, 10V
- Drain to Source Voltage (Vdss) :
- 400V
- Gate Charge (Qg) (Max) @ Vgs :
- 7.5nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 400V
- Terminal Finish :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 120 mJ
- Pulsed Drain Current-Max (IDM) :
- 8A
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Qualification Status :
- COMMERCIAL
- Case Connection :
- DRAIN
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 2.5W Ta 30W Tc
- Datasheets
- FQD3N40TF

N-Channel Tape & Reel (TR) 3.4 Ω @ 1A, 10V ±30V 230pF @ 25V 7.5nC @ 10V 400V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD3N40TF Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 120 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 230pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 2A.Pulsed drain current is maximum rated peak drain current 8A.A normal operation of the DS requires keeping the breakdown voltage above 400V.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FQD3N40TF Features
the avalanche energy rating (Eas) is 120 mJ
based on its rated peak drain current 8A.
a 400V drain to source voltage (Vdss)
FQD3N40TF Applications
There are a lot of Rochester Electronics, LLC
FQD3N40TF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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