FQD3N30TF
- Mfr.Part #
- FQD3N30TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 2.4A DPAK
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- DS Breakdown Voltage-Min :
- 300V
- Qualification Status :
- COMMERCIAL
- Reach Compliance Code :
- Unknown
- Gate Charge (Qg) (Max) @ Vgs :
- 7nC @ 10V
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 2.4A Tc
- Terminal Finish :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 300V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID) :
- 2.4A
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 230pF @ 25V
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Avalanche Energy Rating (Eas) :
- 140 mJ
- Power Dissipation-Max :
- 2.5W Ta 30W Tc
- Rds On (Max) @ Id, Vgs :
- 2.2 Ω @ 1.2A, 10V
- Pulsed Drain Current-Max (IDM) :
- 9.6A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- QFET®
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Datasheets
- FQD3N30TF

N-Channel Tape & Reel (TR) 2.2 Ω @ 1.2A, 10V ±30V 230pF @ 25V 7nC @ 10V 300V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD3N30TF Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 140 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 230pF @ 25V.2.4A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 9.6A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 300V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.
FQD3N30TF Features
the avalanche energy rating (Eas) is 140 mJ
based on its rated peak drain current 9.6A.
a 300V drain to source voltage (Vdss)
FQD3N30TF Applications
There are a lot of Rochester Electronics, LLC
FQD3N30TF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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