FQD3N60CTM-WS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 1.2A, 10V

Case Connection :

DRAIN

FET Type :

N-Channel

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

50W Tc

Terminal Finish :

Tin (Sn)

Series :

QFET®

Current - Continuous Drain (Id) @ 25°C :

2.4A Tc

Turn-Off Delay Time :

35 ns

Turn On Delay Time :

12 ns

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

50W

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Rise Time :

30ns

Terminal Form :

Gull wing

Number of Pins :

3

Mount :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

2.4A

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pulsed Drain Current-Max (IDM) :

9.6A

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±30V

Fall Time (Typ) :

35 ns

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

DS Breakdown Voltage-Min :

600V

Factory Lead Time :

11 Weeks

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

565pF @ 25V

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

600V

JEDEC-95 Code :

TO-252AA

Transistor Element Material :

SILICON

Weight :

260.37mg

Pbfree Code :

yes