FQA28N50F
- Mfr.Part #
- FQA28N50F
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 28.4A TO3P
- Stock
- 16,908
- In Stock :
- 16,908
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Avalanche Energy Rating (Eas) :
- 1300 mJ
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- COMMERCIAL
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5.6pF @ 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 500V
- Terminal Finish :
- MATTE TIN
- DS Breakdown Voltage-Min :
- 500V
- Surface Mount :
- No
- JESD-30 Code :
- R-PSFM-T3
- Vgs (Max) :
- ±30V
- Pulsed Drain Current-Max (IDM) :
- 113.6A
- Current - Continuous Drain (Id) @ 25°C :
- 28.4A Tc
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 14.2A, 10V
- Package / Case :
- TO-3P-3, SC-65-3
- Terminal Position :
- Single
- Pin Count :
- 3
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 28.4A
- Drain-source On Resistance-Max :
- 0.16Ohm
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- FRFET®
- Power Dissipation-Max :
- 310W Tc
- Reach Compliance Code :
- Unknown
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Datasheets
- FQA28N50F

N-Channel Tube 160m Ω @ 14.2A, 10V ±30V 5.6pF @ 25V 140nC @ 10V 500V TO-3P-3, SC-65-3
FQA28N50F Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1300 mJ.A device's maximal input capacitance is 5.6pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 28.4A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 113.6A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FQA28N50F Features
the avalanche energy rating (Eas) is 1300 mJ
based on its rated peak drain current 113.6A.
a 500V drain to source voltage (Vdss)
FQA28N50F Applications
There are a lot of Rochester Electronics, LLC
FQA28N50F applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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