FQA28N15

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

33A

REACH SVHC :

No SVHC

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

90m Ω @ 16.5A, 10V

Resistance :

90mOhm

Turn-Off Delay Time :

100 ns

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Rise Time :

180ns

Length :

15.8mm

Published :

2013

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Through Hole

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

4V @ 250µA

Threshold Voltage :

4V

Factory Lead Time :

4 Weeks

Current - Continuous Drain (Id) @ 25°C :

33A Tc

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

115 ns

Package / Case :

TO-3P-3, SC-65-3

Transistor Element Material :

SILICON

Packaging :

Tube

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 25V

Turn On Delay Time :

17 ns

FET Type :

N-Channel

Weight :

6.401g

Pbfree Code :

yes

Width :

5mm

Number of Pins :

3

Drain to Source Breakdown Voltage :

150V

Additional Feature :

FAST SWITCHING

Number of Terminations :

3

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Transistor Application :

SWITCHING

Voltage - Rated DC :

150V

Height :

20.1mm

Continuous Drain Current (ID) :

33A

Power Dissipation-Max :

227W Tc

Power Dissipation :

227W

Vgs (Max) :

±25V

Lead Free :

Lead Free

JESD-609 Code :

e3

Series :

QFET®

Operating Mode :

ENHANCEMENT MODE