FQA24N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

80 ns

Rds On (Max) @ Id, Vgs :

200m Ω @ 12A, 10V

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 6 days ago)

Voltage - Rated DC :

500V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

500V

Power Dissipation :

290W

Vgs (Max) :

±30V

Rise Time :

250ns

RoHS Status :

RoHS Compliant

REACH SVHC :

No SVHC

Current Rating :

24A

Published :

2000

Number of Terminations :

3

Length :

15.8mm

Power Dissipation-Max :

290W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Series :

QFET®

Nominal Vgs :

5 V

Qualification Status :

Not Qualified

Terminal Finish :

Tin (Sn)

Factory Lead Time :

4 Weeks

Package / Case :

TO-3P-3, SC-65-3

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Dual Supply Voltage :

500V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Continuous Drain Current (ID) :

24A

Resistance :

200mOhm

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Lead Free :

Lead Free

Pbfree Code :

yes

Mount :

Through Hole

Weight :

6.401g

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Turn-Off Delay Time :

200 ns

Fall Time (Typ) :

155 ns

Mounting Type :

Through Hole

Height :

18.9mm

Number of Elements :

1

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Transistor Application :

SWITCHING

Width :

5mm

Pulsed Drain Current-Max (IDM) :

96A