FQA28N50F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

1300 mJ

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

5.6pF @ 25V

Rds On (Max) @ Id, Vgs :

160m Ω @ 14.2A, 10V

Drain-source On Resistance-Max :

0.16Ohm

Drain to Source Voltage (Vdss) :

500V

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

28.4A Tc

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Qualification Status :

COMMERCIAL

DS Breakdown Voltage-Min :

500V

Package / Case :

TO-3P-3, SC-65-3

Vgs (Max) :

±30V

Power Dissipation-Max :

310W Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

JESD-609 Code :

e3

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

28.4A

Series :

FRFET®

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

Not Applicable

Pbfree Code :

yes

Pin Count :

3

Transistor Application :

SWITCHING

Terminal Position :

Single

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

113.6A

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Mounting Type :

Through Hole