FQA28N50F

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Mfr.Part #
FQA28N50F
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 500V 28.4A TO3P
Stock
16,908
In Stock :
16,908

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-3P-3, SC-65-3
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Pin Count :
3
Vgs (Max) :
±30V
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
113.6A
Gate Charge (Qg) (Max) @ Vgs :
140nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
MATTE TIN
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
10V
Surface Mount :
No
RoHS Status :
ROHS3 Compliant
JESD-30 Code :
R-PSFM-T3
Pbfree Code :
yes
Current - Continuous Drain (Id) @ 25°C :
28.4A Tc
Rds On (Max) @ Id, Vgs :
160m Ω @ 14.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
5.6pF @ 25V
Vgs(th) (Max) @ Id :
5V @ 250μA
Configuration :
SINGLE WITH BUILT-IN DIODE
Avalanche Energy Rating (Eas) :
1300 mJ
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Drain to Source Voltage (Vdss) :
500V
Operating Temperature :
-55°C~150°C TJ
Peak Reflow Temperature (Cel) :
Not Applicable
DS Breakdown Voltage-Min :
500V
Number of Terminations :
3
Drain Current-Max (Abs) (ID) :
28.4A
Series :
FRFET®
Drain-source On Resistance-Max :
0.16Ohm
Terminal Position :
Single
Power Dissipation-Max :
310W Tc
Qualification Status :
COMMERCIAL
Number of Elements :
1
Mounting Type :
Through Hole
Reach Compliance Code :
Unknown
Packaging :
Tube
Introducing Transistors - FETs, MOSFETs - Single onsemi FQA28N50F from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, FQA28N50F pinout, FQA28N50F datasheet PDF, FQA28N50F amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQA28N50F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQA28N50F


N-Channel Tube 160m Ω @ 14.2A, 10V ±30V 5.6pF @ 25V 140nC @ 10V 500V TO-3P-3, SC-65-3

FQA28N50F Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1300 mJ.A device's maximal input capacitance is 5.6pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 28.4A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 113.6A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

FQA28N50F Features


the avalanche energy rating (Eas) is 1300 mJ
based on its rated peak drain current 113.6A.
a 500V drain to source voltage (Vdss)


FQA28N50F Applications


There are a lot of Rochester Electronics, LLC
FQA28N50F applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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