FP75R17N3E4BPSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Modules

Power - Max :

555W

Terminal Form :

UNSPECIFIED

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

UPPER

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Collector (Ic) (Max) :

125A

Transistor Application :

POWER CONTROL

Number of Elements :

7

Case Connection :

Isolated

Number of Terminations :

35

Operating Temperature :

-40°C~150°C

Turn On Time :

305 ns

Configuration :

Three Phase Inverter

Vce(on) (Max) @ Vge, Ic :

2.3V @ 15V, 75A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

1mA

Published :

2002

Input Capacitance (Cies) @ Vce :

6.8nF @ 25V

NTC Thermistor :

yes

Package / Case :

Module

JESD-30 Code :

R-XUFM-X35

Mounting Type :

Chassis Mount

Factory Lead Time :

52 Weeks

ECCN Code :

EAR99

Voltage - Collector Emitter Breakdown (Max) :

1700V

Turn Off Time-Nom (toff) :

800 ns

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Additional Feature :

UL RECOGNIZED

Surface Mount :

No

IGBT Type :

Trench Field Stop

Input :

Standard