FMBM5551

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Elements :

2

Number of Terminations :

6

Polarity :

NPN

Frequency :

300MHz

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

700mW

Transistor Type :

2 NPN (Dual)

Transition Frequency :

100MHz

Element Configuration :

Dual

Contact Plating :

Tin

Max Collector Current :

600mA

hFE Min :

80

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Mounting Type :

Surface Mount

Length :

3mm

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Operating Temperature :

150°C TJ

Emitter Base Voltage (VEBO) :

6V

Transistor Application :

AMPLIFIER

Factory Lead Time :

6 Weeks

Height :

1.12mm

Weight :

36mg

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

50nA ICBO

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

160V

Base Part Number :

FMBM5551

Qualification Status :

Not Qualified

Max Power Dissipation :

700mW

Collector Base Voltage (VCBO) :

180V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

6

Gain Bandwidth Product :

300MHz

Packaging :

Tape and Reel (TR)

Published :

2008

ECCN Code :

EAR99

Width :

1.68mm

Current Rating :

600mA

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Collector Emitter Breakdown Voltage :

160V

Collector Emitter Voltage (VCEO) :

160V

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Breakdown Voltage :

160V

Mount :

Surface Mount

Collector Emitter Saturation Voltage :

150mV

Transistor Element Material :

SILICON

Lead Free :

Lead Free