FMBM5551

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Power Dissipation :

700mW

Collector Base Voltage (VCBO) :

180V

Frequency :

300MHz

hFE Min :

80

Mount :

Surface Mount

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

Transition Frequency :

100MHz

Height :

1.12mm

Current - Collector Cutoff (Max) :

50nA ICBO

Lead Free :

Lead Free

Number of Pins :

6

Gain Bandwidth Product :

300MHz

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Pbfree Code :

yes

Number of Elements :

2

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Voltage - Rated DC :

160V

Current Rating :

600mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

6V

Max Collector Current :

600mA

Qualification Status :

Not Qualified

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Length :

3mm

Number of Terminations :

6

Published :

2008

Mounting Type :

Surface Mount

Base Part Number :

FMBM5551

Width :

1.68mm

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

160V

JESD-609 Code :

e3

Transistor Type :

2 NPN (Dual)

Weight :

36mg

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Contact Plating :

Tin

Element Configuration :

Dual

Collector Emitter Breakdown Voltage :

160V

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

700mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

6 Weeks

Polarity :

NPN

Max Breakdown Voltage :

160V

Collector Emitter Saturation Voltage :

150mV

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED