FMBM5401
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- Mfr.Part #
- FMBM5401
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.6A SUPERSOT-6
- Stock
- 4,880
- In Stock ：
- 4,880
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Transition Frequency :
- 100MHz
- Transistor Application :
- AMPLIFIER
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Number of Terminations :
- 6
- Element Configuration :
- Dual
- Max Breakdown Voltage :
- 150V
- Frequency :
- 300MHz
- Factory Lead Time :
- 4 Weeks
- Number of Elements :
- 2
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Gain Bandwidth Product :
- 300MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 6
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Power Dissipation :
- 700mW
- Emitter Base Voltage (VEBO) :
- -5V
- Contact Plating :
- Tin
- Published :
- 2005
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Length :
- 3mm
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- -160V
- Max Collector Current :
- 600mA
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Current Rating :
- -600mA
- Collector Emitter Breakdown Voltage :
- 150V
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Width :
- 1.68mm
- Weight :
- 36mg
- Collector Emitter Saturation Voltage :
- -200mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA 5V
- Transistor Element Material :
- SILICON
- hFE Min :
- 60
- Base Part Number :
- FMBM5401
- Collector Emitter Voltage (VCEO) :
- 150V
- Radiation Hardening :
- No
- Max Power Dissipation :
- 700mW
- Voltage - Rated DC :
- -150V
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 1.12mm
- Datasheets
- FMBM5401
PNP -55°C~150°C TJ 50nA ICBO 2 Elements 6 Terminations SILICON PNP SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Surface Mount
FMBM5401 Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -200mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -600mA.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 150V volts.The maximum collector current is 600mA volts.
FMBM5401 Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 100MHz
FMBM5401 Applications
There are a lot of ON Semiconductor
FMBM5401 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FMBM5401-SB74001 | onsemi | 8,667 | TRANS PNP 150V 0.6A SUPERSOT-6 |
| FMBM5551 | onsemi | 625 | TRANS NPN 160V 0.6A SSOT-6 |
| FMBM5551-SB16001 | onsemi | 6,076 | TRANS NPN 160V 0.6A SSOT-6 |
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