FJV1845PMTF
- Mfr.Part #
- FJV1845PMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 0.05A SOT23-3
- Stock
- 15,054
- In Stock :
- 15,054
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 120V
- Length :
- 2.9mm
- Transition Frequency :
- 110MHz
- Collector Emitter Breakdown Voltage :
- 120V
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Max Collector Current :
- 50mA
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Pbfree Code :
- yes
- Lifecycle Status :
- LIFETIME (Last Updated: 2 days ago)
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Saturation Voltage :
- 70mV
- hFE Min :
- 200
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 120V
- Collector Base Voltage (VCBO) :
- 120V
- Operating Temperature :
- 150°C TJ
- Published :
- 2002
- Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Current Rating :
- 50mA
- Voltage - Rated DC :
- 120V
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- FJV1845
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Max Power Dissipation :
- 300mW
- Terminal Finish :
- Tin (Sn)
- Width :
- 1.3mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Weight :
- 30mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Factory Lead Time :
- 13 Weeks
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Frequency - Transition :
- 110MHz
- Power Dissipation :
- 300mW
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Height :
- 1.04mm
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Datasheets
- FJV1845PMTF

NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FJV1845PMTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 1mA 6V DC current gain.As it features a collector emitter saturation voltage of 70mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 110MHz in the part.Single BJT transistor can be broken down at a voltage of 120V volts.When collector current reaches its maximum, it can reach 50mA volts.
FJV1845PMTF Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of 70mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 110MHz
FJV1845PMTF Applications
There are a lot of ON Semiconductor
FJV1845PMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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