FJV1845EMTF
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- Mfr.Part #
- FJV1845EMTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 0.05A SOT23
- Stock
- 9,916
- In Stock ：
- 9,916
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 50mA
- Voltage - Rated DC :
- 120V
- Power Dissipation :
- 300mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- hFE Min :
- 200
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Transition Frequency :
- 110MHz
- Collector Base Voltage (VCBO) :
- 120V
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Height :
- 1.04mm
- Max Power Dissipation :
- 300mW
- JESD-609 Code :
- e3
- Published :
- 2002
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 100MHz
- Max Breakdown Voltage :
- 120V
- Width :
- 1.3mm
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 120V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Current Rating :
- 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 1mA 6V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Polarity/Channel Type :
- NPN
- Base Part Number :
- FJV1845
- Collector Emitter Saturation Voltage :
- 70mV
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 120V
- Weight :
- 30mg
- Factory Lead Time :
- 6 Weeks
- Length :
- 2.9mm
- Terminal Position :
- Dual
- Frequency - Transition :
- 110MHz
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- FJV1845EMTF
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FJV1845EMTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 400 @ 1mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 70mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 1mA, 10mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 50mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 110MHz.The breakdown input voltage is 120V volts.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.
FJV1845EMTF Features
the DC current gain for this device is 400 @ 1mA 6V
a collector emitter saturation voltage of 70mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 110MHz
FJV1845EMTF Applications
There are a lot of ON Semiconductor
FJV1845EMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
| FJV1845EMTF | Fairchild Semiconductor | 9,916 | TRANS NPN 120V 0.05A SOT23-3 |
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| FJV1845UMTF | Fairchild Semiconductor | 7,070 | TRANS NPN 120V 0.05A SOT23-3 |
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