FJT44KTF
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- Mfr.Part #
- FJT44KTF
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.3A SOT223-4
- Stock
- 1,143
- In Stock ：
- 1,143
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-261-4, TO-261AA
- Published :
- 2009
- Collector Base Voltage (VCBO) :
- 500V
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 4
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 400V
- Length :
- 6.5mm
- Weight :
- 188.014037mg
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 400V
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 400V
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 400V
- hFE Min :
- 50
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 2W
- Number of Pins :
- 4
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Radiation Hardening :
- No
- Max Power Dissipation :
- 2W
- Voltage :
- 400V
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- 300mA
- Width :
- 3.5mm
- Pbfree Code :
- yes
- Max Collector Current :
- 300mA
- Height :
- 1.6mm
- Base Part Number :
- FJT44
- Collector Emitter Saturation Voltage :
- 750mV
- Current :
- 3A
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 500nA
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Factory Lead Time :
- 4 Weeks
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 10V
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 5mA, 50mA
- Datasheets
- FJT44KTF
NPN 150°C TJ 500nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FJT44KTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 10mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 750mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 300mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 400V volts.During maximum operation, collector current can be as low as 300mA volts.
FJT44KTF Features
the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 300mA
FJT44KTF Applications
There are a lot of ON Semiconductor
FJT44KTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FJT44TF | onsemi | 1,792 | TRANS NPN 400V 0.3A SOT223-4 |
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