FJT44TF
- Mfr.Part #
- FJT44TF
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.3A SOT223-4
- Stock
- 1,792
- In Stock :
- 1,792
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 500V
- Mount :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 4
- hFE Min :
- 50
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Length :
- 6.5mm
- Voltage - Rated DC :
- 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 10V
- Package / Case :
- TO-261-4, TO-261AA
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 5mA, 50mA
- Factory Lead Time :
- 18 Weeks
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 500nA
- Width :
- 3.5mm
- Max Power Dissipation :
- 2W
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 400V
- Mounting Type :
- Surface Mount
- Current Rating :
- 300mA
- Weight :
- 188mg
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Power Dissipation :
- 2W
- Collector Emitter Saturation Voltage :
- 750mV
- Collector Emitter Breakdown Voltage :
- 400V
- Number of Terminations :
- 4
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 300mA
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Position :
- Dual
- Base Part Number :
- FJT44
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 400V
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.6mm
- Terminal Form :
- Gull wing
- Datasheets
- FJT44TF

NPN 150°C TJ 500nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FJT44TF Overview
This device has a DC current gain of 50 @ 10mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 750mV.A VCE saturation (Max) of 750mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 300mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 400V volts can be used.A maximum collector current of 300mA volts is possible.
FJT44TF Features
the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 300mA
FJT44TF Applications
There are a lot of ON Semiconductor
FJT44TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FJT44KTF | onsemi | 1,143 | TRANS NPN 400V 0.3A SOT223-4 |
















