FJP5555TU
- Mfr.Part #
- FJP5555TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 5A TO220-3
- Stock
- 3,053
- In Stock :
- 3,053
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 3.5A
- Collector Emitter Saturation Voltage :
- 1.5V
- Weight :
- 1.8g
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Max Collector Current :
- 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 400V
- Length :
- 10.67mm
- hFE Min :
- 20
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 75W
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Current Rating :
- 5A
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 14 Weeks
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 1.05kV
- Voltage - Rated DC :
- 400V
- Emitter Base Voltage (VEBO) :
- 14V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Height :
- 16.51mm
- Width :
- 4.83mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 800mA 3V
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 400V
- Published :
- 2011
- Lead Free :
- Lead Free
- Package / Case :
- TO-220-3
- Max Power Dissipation :
- 75W
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Element Configuration :
- Single
- Datasheets
- FJP5555TU

NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP5555TU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 800mA 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 1A, 3.5A.The emitter base voltage can be kept at 14V for high efficiency.The current rating of this fuse is 5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
FJP5555TU Features
the DC current gain for this device is 20 @ 800mA 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the emitter base voltage is kept at 14V
the current rating of this device is 5A
FJP5555TU Applications
There are a lot of ON Semiconductor
FJP5555TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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