FJP5027OTU
- Mfr.Part #
- FJP5027OTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 3A TO220-3
- Stock
- 1,606
- In Stock :
- 1,606
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 15MHz
- Weight :
- 1.8g
- Max Power Dissipation :
- 50W
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Package / Case :
- TO-220-3
- Lead Free :
- Lead Free
- Current Rating :
- 3A
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 800V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 200mA 5V
- Collector Emitter Voltage (VCEO) :
- 800V
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Factory Lead Time :
- 24 Weeks
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 800V
- Element Configuration :
- Single
- Packaging :
- Tube
- Number of Elements :
- 1
- Max Collector Current :
- 3A
- Polarity/Channel Type :
- NPN
- Base Part Number :
- FJP5027
- Gain Bandwidth Product :
- 15MHz
- Power Dissipation :
- 50W
- Emitter Base Voltage (VEBO) :
- 7V
- Frequency :
- 15MHz
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Published :
- 2011
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- JEDEC-95 Code :
- TO-220AB
- hFE Min :
- 10
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 1.5A
- Collector Base Voltage (VCBO) :
- 1.1kV
- Datasheets
- FJP5027OTU

NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP5027OTU Overview
This device has a DC current gain of 20 @ 200mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 3A.In this part, there is a transition frequency of 15MHz.The maximum collector current is 3A volts.
FJP5027OTU Features
the DC current gain for this device is 20 @ 200mA 5V
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 15MHz
FJP5027OTU Applications
There are a lot of ON Semiconductor
FJP5027OTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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