FJP5027RTU
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- Mfr.Part #
- FJP5027RTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 3A TO220-3
- Stock
- 76,149
- In Stock ：
- 76,149
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 1.5A
- Current Rating :
- 3A
- Number of Elements :
- 1
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- hFE Min :
- 10
- Collector Base Voltage (VCBO) :
- 1.1kV
- Operating Temperature :
- 150°C TJ
- JEDEC-95 Code :
- TO-220AB
- Published :
- 2003
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Power Dissipation :
- 50W
- Collector Emitter Breakdown Voltage :
- 800V
- Gain Bandwidth Product :
- 15MHz
- Length :
- 9.9mm
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- Width :
- 4.5mm
- Packaging :
- Tube
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 800V
- Max Power Dissipation :
- 50W
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 1.8g
- Pbfree Code :
- yes
- Height :
- 15.7mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Emitter Voltage (VCEO) :
- 800V
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 7V
- Frequency :
- 15MHz
- Base Part Number :
- FJP5027
- ECCN Code :
- EAR99
- Max Collector Current :
- 3A
- Collector Emitter Saturation Voltage :
- 2V
- Factory Lead Time :
- 4 Weeks
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 200mA 5V
- Transition Frequency :
- 15MHz
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Datasheets
- FJP5027RTU
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP5027RTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 200mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 300mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 15MHz.During maximum operation, collector current can be as low as 3A volts.
FJP5027RTU Features
the DC current gain for this device is 15 @ 200mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 15MHz
FJP5027RTU Applications
There are a lot of ON Semiconductor
FJP5027RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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