FJP2145TU
- Mfr.Part #
- FJP2145TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 5A TO220-3
- Stock
- 19
- In Stock :
- 19
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 200mA 5V
- Operating Temperature :
- -55°C~125°C TJ
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Breakdown Voltage :
- 800V
- Series :
- ESBC™
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 1.5A
- Collector Emitter Voltage (VCEO) :
- 800V
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Gain Bandwidth Product :
- 15MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Factory Lead Time :
- 7 Weeks
- Max Power Dissipation :
- 120W
- Power Dissipation :
- 120W
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Width :
- 4.83mm
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Published :
- 2013
- Package / Case :
- TO-220-3
- Transition Frequency :
- 28.4MHz
- hFE Min :
- 20
- Weight :
- 1.8g
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Length :
- 10.67mm
- Height :
- 16.51mm
- Collector Emitter Saturation Voltage :
- 151mV
- Collector Base Voltage (VCBO) :
- 1.1kV
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 5A
- Packaging :
- Tube
- Radiation Hardening :
- No
- Datasheets
- FJP2145TU

NPN -55°C~125°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP2145TU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 200mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 151mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 300mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 28.4MHz.During maximum operation, collector current can be as low as 5A volts.
FJP2145TU Features
the DC current gain for this device is 20 @ 200mA 5V
a collector emitter saturation voltage of 151mV
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
a transition frequency of 28.4MHz
FJP2145TU Applications
There are a lot of ON Semiconductor
FJP2145TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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