FJP2160DTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transition Frequency :

25MHz

Package / Case :

TO-220-3

Height :

15.95mm

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

100μA

Width :

4.5mm

Collector Base Voltage (VCBO) :

1.6kV

HTS Code :

8541.29.00.95

Mount :

Through Hole

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 400mA 3V

Configuration :

SINGLE WITH BUILT-IN FET AND DIODE

Transistor Application :

SWITCHING

Number of Terminations :

3

Series :

ESBC™

Number of Elements :

1

JESD-609 Code :

e3

Packaging :

Tube

Operating Temperature :

-55°C~125°C TJ

Power - Max :

100W

Mounting Type :

Through Hole

Weight :

1.8g

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

750mV @ 330mA, 1A

Terminal Position :

Single

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

800V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

6 Weeks

Max Power Dissipation :

100W

hFE Min :

20

Emitter Base Voltage (VEBO) :

12V

Collector Emitter Breakdown Voltage :

800V

Lead Free :

Lead Free

Polarity/Channel Type :

NPN

Length :

9.9mm

Frequency - Transition :

5MHz

ECCN Code :

EAR99

Transistor Type :

NPN

Gate to Source Voltage (Vgs) :

20V

Max Collector Current :

2A

Published :

2012