FFB5551

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Length :

2mm

Radiation Hardening :

No

Voltage - Rated DC :

160V

hFE Min :

80

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Base Part Number :

FFB5551

Number of Elements :

2

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

200mV

Mount :

Surface Mount

Transition Frequency :

100MHz

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

160V

Weight :

28mg

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Max Breakdown Voltage :

160V

Package / Case :

6-TSSOP, SC-88, SOT-363

Current - Collector Cutoff (Max) :

50nA ICBO

Current Rating :

200mA

Frequency :

300MHz

Number of Terminations :

6

Max Collector Current :

200mA

Emitter Base Voltage (VEBO) :

6V

Polarity :

NPN

Width :

1.25mm

JESD-609 Code :

e3

Element Configuration :

Dual

Transistor Type :

2 NPN (Dual)

Collector Base Voltage (VCBO) :

180V

Height :

1mm

Max Power Dissipation :

200mW

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Transistor Application :

AMPLIFIER

Collector Emitter Voltage (VCEO) :

160V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Power Dissipation :

200mW

ECCN Code :

EAR99

Gain Bandwidth Product :

300MHz