FFB5551

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Collector Emitter Saturation Voltage :

200mV

Transition Frequency :

100MHz

Element Configuration :

Dual

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Length :

2mm

Weight :

28mg

Emitter Base Voltage (VEBO) :

6V

Frequency :

300MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Type :

2 NPN (Dual)

Gain Bandwidth Product :

300MHz

Width :

1.25mm

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Voltage - Rated DC :

160V

JESD-609 Code :

e3

Lead Free :

Lead Free

Number of Pins :

6

Max Power Dissipation :

200mW

Power Dissipation :

200mW

Height :

1mm

Base Part Number :

FFB5551

Current - Collector Cutoff (Max) :

50nA ICBO

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Mount :

Surface Mount

Max Breakdown Voltage :

160V

Collector Emitter Breakdown Voltage :

160V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

160V

Radiation Hardening :

No

Number of Terminations :

6

Current Rating :

200mA

Max Collector Current :

200mA

Polarity :

NPN

hFE Min :

80

Collector Base Voltage (VCBO) :

180V

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Application :

AMPLIFIER

ECCN Code :

EAR99

Number of Elements :

2

Factory Lead Time :

8 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V