FDW2521C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

20V

Terminal Finish :

Tin

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.021Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N and P-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G8

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

20V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Reach Compliance Code :

Unknown

Pbfree Code :

yes

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Pin Count :

8

Terminal Position :

Dual

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

5.5A 3.8A

Number of Terminations :

8

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Power - Max :

600mW

JEDEC-95 Code :

MO-153AA

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

5.5A

Input Capacitance (Ciss) (Max) @ Vds :

1082pF @ 10V

Rds On (Max) @ Id, Vgs :

21m Ω @ 5.5A, 4.5V

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

JESD-609 Code :

e3