FDW2516NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Power - Max :

1.1W

Drain to Source Voltage (Vdss) :

20V

Pulsed Drain Current-Max (IDM) :

20A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Drain Current-Max (Abs) (ID) :

5.8A

JESD-30 Code :

R-PDSO-G8

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

745pF @ 10V

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs :

30m Ω @ 5.8A, 4.5V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.03Ohm

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Terminal Finish :

Tin

Series :

PowerTrench®

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

JESD-609 Code :

e3

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Pin Count :

8

Qualification Status :

COMMERCIAL

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

8

Pbfree Code :

yes

FET Feature :

Logic Level Gate

Current - Continuous Drain (Id) @ 25°C :

5.8A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

yes

DS Breakdown Voltage-Min :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED