FDU8896

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSIP-T3

FET Type :

N-Channel

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

Not Applicable

DS Breakdown Voltage-Min :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Avalanche Energy Rating (Eas) :

168 mJ

Power Dissipation-Max :

80W Tc

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2.525pF @ 15V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Pin Count :

3

Number of Elements :

1

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

17A Ta 94A Tc

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®

Qualification Status :

COMMERCIAL

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Terminal Finish :

MATTE TIN

Vgs (Max) :

±20V

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 35A, 10V

Drain-source On Resistance-Max :

0.068Ohm

Drain Current-Max (Abs) (ID) :

17A

Vgs(th) (Max) @ Id :

2.5V @ 250μA