FDU8586

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Unknown

Drain Current-Max (Abs) (ID) :

35A

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Surface Mount :

No

FET Type :

N-Channel

Power Dissipation-Max :

77W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2.48pF @ 10V

Drain-source On Resistance-Max :

0.0055Ohm

JESD-30 Code :

R-PSIP-T3

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Series :

PowerTrench®

Mounting Type :

Through Hole

Pbfree Code :

yes

Case Connection :

Isolated

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Packaging :

Tube

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 35A, 10V

DS Breakdown Voltage-Min :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

354A

Pin Count :

3

Avalanche Energy Rating (Eas) :

144 mJ