FDU8586

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

DS Breakdown Voltage-Min :

20V

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

20V

Power Dissipation-Max :

77W Tc

Drain-source On Resistance-Max :

0.0055Ohm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Vgs (Max) :

±20V

Surface Mount :

No

Number of Terminations :

3

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Single

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

354A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSIP-T3

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 35A, 10V

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

144 mJ

Series :

PowerTrench®

Case Connection :

Isolated

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Reach Compliance Code :

Unknown

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

2.48pF @ 10V

Drain Current-Max (Abs) (ID) :

35A