FDU8882

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Case Connection :

Isolated

Rds On (Max) @ Id, Vgs :

11.5m Ω @ 35A, 10V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Power Dissipation-Max :

55W Tc

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.015Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

MATTE TIN

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

DS Breakdown Voltage-Min :

30V

JESD-30 Code :

R-PSIP-T3

Drain to Source Voltage (Vdss) :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Pin Count :

3

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain Current-Max (Abs) (ID) :

35A

Qualification Status :

COMMERCIAL

Current - Continuous Drain (Id) @ 25°C :

12.6A Ta 55A Tc

Series :

PowerTrench®

Input Capacitance (Ciss) (Max) @ Vds :

1.26pF @ 15V

Number of Terminations :

3

Packaging :

Tube

Avalanche Energy Rating (Eas) :

41 mJ

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Mounting Type :

Through Hole