FDS6912
- Mfr.Part #
- FDS6912
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 6
- Stock
- 36,441
- In Stock :
- 36,441
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 1.6W
- Turn-Off Delay Time :
- 23 ns
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Number of Terminations :
- 8
- Turn On Delay Time :
- 8 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 575pF @ 15V
- Series :
- PowerTrench®
- Continuous Drain Current (ID) :
- 6A
- Drain to Source Breakdown Voltage :
- 30V
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Width :
- 4mm
- Radiation Hardening :
- No
- Power - Max :
- 900mW
- Number of Elements :
- 2
- Drain Current-Max (Abs) (ID) :
- 6A
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Termination :
- SMD/SMT
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Published :
- 2003
- Weight :
- 187mg
- FET Type :
- 2 N-Channel (Dual)
- Factory Lead Time :
- 10 Weeks
- Dual Supply Voltage :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current Rating :
- 6A
- Length :
- 5mm
- Gate Charge (Qg) (Max) @ Vgs :
- 8.1nC @ 5V
- Terminal Form :
- Gull wing
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Height :
- 1.5mm
- FET Feature :
- Logic Level Gate
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 8
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 6A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- 30V
- Power Dissipation :
- 1.6W
- Transistor Element Material :
- SILICON
- Element Configuration :
- Dual
- Resistance :
- 28mOhm
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Threshold Voltage :
- 1.9V
- Rise Time :
- 5ns
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 5 ns
- Datasheets
- FDS6912

FDS6912A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS6912A Description
These N-Channel Logic Level MOSFETs are made utilizing the cutting-edge POWERTRENCH technology from Onsemi, which has been carefully designed to reduce the on-state resistance while maintaining exceptional switching performance. These devices work well in battery- and low-voltage applications that call for quick switching and little in-line power loss.
FDS6912A Features
? Switching With Speed
? Minimal Gate Fee
? Ultra-Low RDS High Performance Trench Technology (ON)
? Ability to Handle High Power and Current
? This device is halogen- and pb-free.
FDS6912A Applications
Switching applications
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