FDS6699S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Threshold Voltage :

1.4V

Gate Charge (Qg) (Max) @ Vgs :

91nC @ 10V

Mount :

Surface Mount

Voltage - Rated DC :

30V

Turn On Delay Time :

11 ns

Number of Pins :

8

Current Rating :

21A

Current - Continuous Drain (Id) @ 25°C :

21A Ta

Contact Plating :

Tin

Pbfree Code :

yes

Element Configuration :

Single

JESD-609 Code :

e3

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

1

Resistance :

3.6mOhm

Factory Lead Time :

18 Weeks

Width :

4mm

Radiation Hardening :

No

Power Dissipation-Max :

2.5W Ta

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Power Dissipation :

2.5mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

21A

Transistor Application :

SWITCHING

Number of Terminations :

8

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Lead Free :

Lead Free

Length :

5mm

Terminal Position :

Dual

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

3V @ 1mA

Drain to Source Breakdown Voltage :

30V

Series :

PowerTrench®, SyncFET™

Height :

1.5mm

Dual Supply Voltage :

30V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Weight :

130mg

Mounting Type :

Surface Mount

Termination :

SMD/SMT

Published :

2005

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

3610pF @ 15V

ECCN Code :

EAR99

Rise Time :

12ns

Fall Time (Typ) :

38 ns

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 21A, 10V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

1.4 V

Turn-Off Delay Time :

73 ns