FDS6694
- Mfr.Part #
- FDS6694
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 12A 8SOIC
- Stock
- 35,872
- In Stock :
- 35,872
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Voltage (Vdss) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.011Ohm
- JESD-30 Code :
- R-PDSO-G8
- Qualification Status :
- COMMERCIAL
- Drain Current-Max (Abs) (ID) :
- 12A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 5V
- Pin Count :
- 8
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 12A, 10V
- Packaging :
- Tape and Reel (TR)
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Terminal Finish :
- MATTE TIN
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.293pF @ 15V
- DS Breakdown Voltage-Min :
- 30V
- Power Dissipation-Max :
- 2.5W Ta
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta
- Number of Elements :
- 1
- Series :
- PowerTrench®
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Datasheets
- FDS6694

N-Channel Tape & Reel (TR) 11m Ω @ 12A, 10V ±20V 1.293pF @ 15V 19nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)
FDS6694 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1.293pF @ 15V.The drain current is the maximum continuous current this device can conduct, which is 12A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
FDS6694 Features
a 30V drain to source voltage (Vdss)
FDS6694 Applications
There are a lot of Rochester Electronics, LLC
FDS6694 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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