FDS6692A

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Mfr.Part #
FDS6692A
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 9A 8SOIC
Stock
1,253
In Stock :
1,253

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Length :
4.9mm
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~150°C TJ
Mount :
Surface Mount
Turn On Delay Time :
8 ns
Published :
2001
Fall Time (Typ) :
32 ns
Rds On (Max) @ Id, Vgs :
11.5m Ω @ 9A, 10V
Case Connection :
DRAIN
Avalanche Energy Rating (Eas) :
79 mJ
Input Capacitance (Ciss) (Max) @ Vds :
1610pF @ 15V
Lead Free :
Lead Free
Height :
1.575mm
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Pbfree Code :
yes
Vgs (Max) :
±20V
Width :
3.9mm
Element Configuration :
Single
Number of Terminations :
8
Number of Elements :
1
FET Type :
N-Channel
Power Dissipation :
1.47W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Power Dissipation-Max :
1.47W Ta
Threshold Voltage :
1.2V
Resistance :
11.5mOhm
Radiation Hardening :
No
Current - Continuous Drain (Id) @ 25°C :
9A Ta
JESD-609 Code :
e4
REACH SVHC :
No SVHC
Continuous Drain Current (ID) :
9A
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Operating Mode :
ENHANCEMENT MODE
ECCN Code :
EAR99
Rise Time :
32ns
Terminal Position :
Dual
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Transistor Element Material :
SILICON
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Contact Plating :
Tin
RoHS Status :
ROHS3 Compliant
Series :
PowerTrench®
Drain Current-Max (Abs) (ID) :
9A
Turn-Off Delay Time :
33 ns
Terminal Form :
Gull wing
Factory Lead Time :
18 Weeks
Weight :
130mg
Transistor Application :
SWITCHING
Packaging :
Tape and Reel (TR)
Drain to Source Breakdown Voltage :
30V
Number of Pins :
8
Datasheets
FDS6692A
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS6692A from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Pins:8, FDS6692A pinout, FDS6692A datasheet PDF, FDS6692A amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS6692A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS6692A


N-Channel Tape & Reel (TR) 11.5m Ω @ 9A, 10V ±20V 1610pF @ 15V 29nC @ 10V 8-SOIC (0.154, 3.90mm Width)

FDS6692A Description


FDS6692A is a 30V N-Channel MOSFET manufactured by ON Semiconductor. FDS6692A has an operational temperature of -55°C to 150°C TJ and maximum power dissipation of 1.47W Ta. This N-Channel MOSFET was created with the goal of increasing the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. Low gate charge, low RDS(ON), and quick switching speed have all been tuned.



FDS6692A Features


  • RDS(ON) = 11.5mΩ, VGS = 10V, ID = 9A

  • RDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 8.2A

  • High-performance trench technology for extremely lower(ON)

  • Low gate charge

  • High power and current handling capability

  • RoHS Compliant



FDS6692A Applications


  • This product is general usage and suitable for many different applications.

  • DC/DC Converters


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