FDS6692A
- Mfr.Part #
- FDS6692A
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 9A 8SOIC
- Stock
- 1,253
- In Stock :
- 1,253
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Length :
- 4.9mm
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Turn On Delay Time :
- 8 ns
- Published :
- 2001
- Fall Time (Typ) :
- 32 ns
- Rds On (Max) @ Id, Vgs :
- 11.5m Ω @ 9A, 10V
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 79 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1610pF @ 15V
- Lead Free :
- Lead Free
- Height :
- 1.575mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Width :
- 3.9mm
- Element Configuration :
- Single
- Number of Terminations :
- 8
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Power Dissipation :
- 1.47W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Power Dissipation-Max :
- 1.47W Ta
- Threshold Voltage :
- 1.2V
- Resistance :
- 11.5mOhm
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 9A Ta
- JESD-609 Code :
- e4
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 9A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Rise Time :
- 32ns
- Terminal Position :
- Dual
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Transistor Element Material :
- SILICON
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Series :
- PowerTrench®
- Drain Current-Max (Abs) (ID) :
- 9A
- Turn-Off Delay Time :
- 33 ns
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 18 Weeks
- Weight :
- 130mg
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- 30V
- Number of Pins :
- 8
- Datasheets
- FDS6692A

N-Channel Tape & Reel (TR) 11.5m Ω @ 9A, 10V ±20V 1610pF @ 15V 29nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS6692A Description
FDS6692A is a 30V N-Channel MOSFET manufactured by ON Semiconductor. FDS6692A has an operational temperature of -55°C to 150°C TJ and maximum power dissipation of 1.47W Ta. This N-Channel MOSFET was created with the goal of increasing the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. Low gate charge, low RDS(ON), and quick switching speed have all been tuned.
FDS6692A Features
-
RDS(ON) = 11.5mΩ, VGS = 10V, ID = 9A
-
RDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 8.2A
-
High-performance trench technology for extremely lower(ON)
-
Low gate charge
-
High power and current handling capability
-
RoHS Compliant
FDS6692A Applications
-
This product is general usage and suitable for many different applications.
-
DC/DC Converters
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