FDS6682
- Mfr.Part #
- FDS6682
- Manufacturer
- onsemi
- Package / Case
- SOIC
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 14A 8SOIC
- Stock
- 5
- In Stock :
- 5
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 44 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Dual Supply Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 14A
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Length :
- 5mm
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 30V
- Min Operating Temperature :
- -55°C
- Drain to Source Resistance :
- 5.7mOhm
- Package / Case :
- SOIC
- Voltage - Rated DC :
- 30V
- Transistor Application :
- SWITCHING
- Number of Pins :
- 8
- Max Power Dissipation :
- 1W
- Nominal Vgs :
- 1.7 V
- Mount :
- Surface Mount
- Current Rating :
- 14A
- Polarity/Channel Type :
- N-Channel
- Rds On Max :
- 7.5 mΩ
- Number of Elements :
- 1
- Pbfree Code :
- yes
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Breakdown Voltage :
- 30V
- Height :
- 1.5mm
- Weight :
- 130mg
- Input Capacitance :
- 2.31nF
- Fall Time (Typ) :
- 16 ns
- Element Configuration :
- Single
- JESD-609 Code :
- e4
- Termination :
- SMD/SMT
- Published :
- 2004
- Rise Time :
- 7ns
- Number of Terminations :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- Resistance :
- 7.5mOhm
- Threshold Voltage :
- 1.7V
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 18 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 4mm
- Power Dissipation :
- 2.5mW
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Max Operating Temperature :
- 150°C
- Turn On Delay Time :
- 10 ns
- Datasheets
- FDS6682

Tape & Reel (TR) 30V SOIC
Description
The FDS6682 is an N-Channel PowerTrench? MOSFET, 30V, 14A, 7.5m|?. With either synchronous or traditional switching PWM controllers, this N-Channel MOSFET has been specifically created to increase the overall efficiency of DC/DC converters. It has been designed to operate as a "low side" synchronous rectifier, offering a very low RDS(ON) in a compact size.
Features
-
Low gate charge (22 nC typical)
-
High performance trench technology for extremelylow RDS(ON)
-
High power and current handling capability
-
14 A, 30 V
-
RDS(ON) = 7.5 m|? @ VGS = 10 V
-
RDS(ON) = 9.0 m|? @ VGS = 4.5 V
Applications
-
This product is general usage and suitable for many different applications
-
DC/DC Converters
-
Small motor control
-
Solar inverters
-
Automotive applications
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