FDS6680

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.01Ohm

Qualification Status :

COMMERCIAL

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Series :

PowerTrench®

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

11.5A

FET Type :

N-Channel

Power Dissipation-Max :

2.5W Ta

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

11.5A Ta

Additional Feature :

LOGIC LEVEL COMPATIBLE

JESD-30 Code :

R-PDSO-G8

JESD-609 Code :

e3

Number of Elements :

1

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

2.07pF @ 15V

Rds On (Max) @ Id, Vgs :

10m Ω @ 11.5A, 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V