FDS6679AZ
- Mfr.Part #
- FDS6679AZ
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 13A 8SOIC
- Stock
- 7
- In Stock :
- 7
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- JESD-609 Code :
- e4
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Terminal Position :
- Dual
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Resistance :
- 9.3mOhm
- Drain to Source Voltage (Vdss) :
- 30V
- Vgs (Max) :
- ±25V
- Height :
- 1.5mm
- Series :
- PowerTrench®
- Turn On Delay Time :
- 13 ns
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Published :
- 2008
- Continuous Drain Current (ID) :
- -13A
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Input Capacitance (Ciss) (Max) @ Vds :
- 3845pF @ 15V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 92 ns
- Factory Lead Time :
- 18 Weeks
- Power Dissipation :
- 2.5W
- Nominal Vgs :
- -1.9 V
- Gate Charge (Qg) (Max) @ Vgs :
- 96nC @ 10V
- Number of Terminations :
- 8
- Current Rating :
- -13A
- Weight :
- 130mg
- Width :
- 4mm
- Power Dissipation-Max :
- 2.5W Ta
- Gate to Source Voltage (Vgs) :
- 25V
- Number of Pins :
- 8
- Mounting Type :
- Surface Mount
- Length :
- 5mm
- Turn-Off Delay Time :
- 210 ns
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drain to Source Breakdown Voltage :
- -30V
- Feedback Cap-Max (Crss) :
- 745 pF
- Voltage - Rated DC :
- -30V
- Rds On (Max) @ Id, Vgs :
- 9.3m Ω @ 13A, 10V
- FET Type :
- P-Channel
- Lead Free :
- Lead Free
- Threshold Voltage :
- -1.9V
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Rise Time :
- 15ns
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta
- Number of Elements :
- 1
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- FDS6679AZ

P-Channel Tape & Reel (TR) 9.3m Ω @ 13A, 10V ±25V 3845pF @ 15V 96nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
FDS6679AZ Description
The FDS6679AZ is a P-channel MOSFET produced using an advanced PowerTrench? process. The FDS6679AZ has been specially tailored to minimize the ON-state resistance. The onsemi FDS6679AZ is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDS6679AZ is in the SOIC-8 package with 2.5W power dissipation.
FDS6679AZ Features
-
Max rDS(on) = 9.3mΩat VGS = -10V, ID = -13A
-
Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
-
Extended VGS range (-25V) for battery applications
-
HBM ESD protection level of 6kV typical (note 3)
-
High-performance trench technology for extremely lowrDS(on)
-
High power and current handling capability
FDS6679AZ Applications
-
Notebook Computers
-
Portable Battery Packs
-
Datacom module
-
Wired networking
-
Wearables (non-medical)
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