FDS6679AZ

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Mfr.Part #
FDS6679AZ
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 30V 13A 8SOIC
Stock
7
In Stock :
7

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
JESD-609 Code :
e4
Terminal Form :
Gull wing
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
3V @ 250µA
Terminal Position :
Dual
REACH SVHC :
No SVHC
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Resistance :
9.3mOhm
Drain to Source Voltage (Vdss) :
30V
Vgs (Max) :
±25V
Height :
1.5mm
Series :
PowerTrench®
Turn On Delay Time :
13 ns
ECCN Code :
EAR99
Radiation Hardening :
No
Published :
2008
Continuous Drain Current (ID) :
-13A
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Input Capacitance (Ciss) (Max) @ Vds :
3845pF @ 15V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Fall Time (Typ) :
92 ns
Factory Lead Time :
18 Weeks
Power Dissipation :
2.5W
Nominal Vgs :
-1.9 V
Gate Charge (Qg) (Max) @ Vgs :
96nC @ 10V
Number of Terminations :
8
Current Rating :
-13A
Weight :
130mg
Width :
4mm
Power Dissipation-Max :
2.5W Ta
Gate to Source Voltage (Vgs) :
25V
Number of Pins :
8
Mounting Type :
Surface Mount
Length :
5mm
Turn-Off Delay Time :
210 ns
Packaging :
Tape and Reel (TR)
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Drain to Source Breakdown Voltage :
-30V
Feedback Cap-Max (Crss) :
745 pF
Voltage - Rated DC :
-30V
Rds On (Max) @ Id, Vgs :
9.3m Ω @ 13A, 10V
FET Type :
P-Channel
Lead Free :
Lead Free
Threshold Voltage :
-1.9V
Contact Plating :
Tin
Element Configuration :
Single
Rise Time :
15ns
Current - Continuous Drain (Id) @ 25°C :
13A Ta
Number of Elements :
1
Mount :
Surface Mount
RoHS Status :
ROHS3 Compliant
Datasheets
FDS6679AZ
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS6679AZ from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:8, Number of Pins:8, Mounting Type:Surface Mount, Package / Case:8-SOIC (0.154, 3.90mm Width), FDS6679AZ pinout, FDS6679AZ datasheet PDF, FDS6679AZ amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS6679AZ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS6679AZ


P-Channel Tape & Reel (TR) 9.3m Ω @ 13A, 10V ±25V 3845pF @ 15V 96nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)

FDS6679AZ Description


The FDS6679AZ is a P-channel MOSFET produced using an advanced PowerTrench? process. The FDS6679AZ has been specially tailored to minimize the ON-state resistance. The onsemi FDS6679AZ is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDS6679AZ is in the SOIC-8 package with 2.5W power dissipation.



FDS6679AZ Features


  • Max rDS(on) = 9.3mΩat VGS = -10V, ID = -13A

  • Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A

  • Extended VGS range (-25V) for battery applications

  • HBM ESD protection level of 6kV typical (note 3)

  • High-performance trench technology for extremely lowrDS(on)

  • High power and current handling capability



FDS6679AZ Applications


  • Notebook Computers

  • Portable Battery Packs

  • Datacom module

  • Wired networking

  • Wearables (non-medical)


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