FDS6679

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

13A

REACH SVHC :

No SVHC

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Resistance :

9mOhm

Rise Time :

10ns

Number of Elements :

1

Transistor Element Material :

SILICON

Termination :

SMD/SMT

Mounting Type :

Surface Mount

Power Dissipation :

2.5W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e4

Threshold Voltage :

-1.6V

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

-30V

Factory Lead Time :

18 Weeks

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn-Off Delay Time :

110 ns

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

9m Ω @ 13A, 10V

Nominal Vgs :

-1.6 V

Number of Pins :

8

Current Rating :

-13A

Dual Supply Voltage :

30V

FET Type :

P-Channel

Series :

PowerTrench®

Turn On Delay Time :

19 ns

Terminal Form :

Gull wing

Weight :

130mg

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Fall Time (Typ) :

65 ns

Input Capacitance (Ciss) (Max) @ Vds :

3939pF @ 15V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Position :

Dual

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Number of Terminations :

8

Contact Plating :

Tin

Vgs (Max) :

±25V

Gate to Source Voltage (Vgs) :

25V

Pbfree Code :

yes

Power Dissipation-Max :

2.5W Ta

Voltage - Rated DC :

-30V

Radiation Hardening :

No