FDS6676AS
- Mfr.Part #
- FDS6676AS
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 14.5A 8SOIC
- Stock
- 12,593
- In Stock :
- 12,593
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Length :
- 5mm
- Threshold Voltage :
- 1.5V
- Contact Plating :
- Tin
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 2.5W Ta
- Turn-Off Delay Time :
- 43 ns
- Continuous Drain Current (ID) :
- 14.5A
- Number of Pins :
- 8
- Weight :
- 130mg
- Element Configuration :
- Single
- Turn On Delay Time :
- 10 ns
- Number of Terminations :
- 8
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Current - Continuous Drain (Id) @ 25°C :
- 14.5A Ta
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Resistance :
- 6mOhm
- JESD-609 Code :
- e4
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Position :
- Dual
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 2.5W
- Series :
- PowerTrench®, SyncFET™
- Width :
- 4mm
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- Factory Lead Time :
- 18 Weeks
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 2510pF @ 15V
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 14.5A, 10V
- Drain to Source Breakdown Voltage :
- 30V
- Fall Time (Typ) :
- 29 ns
- ECCN Code :
- EAR99
- Height :
- 1.5mm
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Rise Time :
- 12ns
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±20V
- Datasheets
- FDS6676AS

N-Channel Tape & Reel (TR) 6m Ω @ 14.5A, 10V ±20V 2510pF @ 15V 63nC @ 10V 8-SOIC (0.154, 3.90mm Width)
In synchronous DC:DC power supply, the FDS6676AS is intended to replace a single SO-8 MOSFET and Schottky diode. With a low RDS(ON) and low gate charge, this 30V MOSFET is designed to maximize power conversion efficiency. Using ON Semiconductor's monolithic SyncFET technology, the FDS6676AS has an inbuilt Schottky diode.
FDS6676AS Features
? 14.5 A, 30 V. RDS(ON) max= 6.0 m? @ VGS = 10 V
RDS(ON) max= 7.25 m? @ VGS = 4.5 V
? Includes SyncFET Schottky body diode
? Low gate charge (45nC typical)
? High performance trench technology for extremely low RDS(ON) and fast switching
? High power and current handling capability
? RoHS compliant
FDS6676AS Applications
? DC/DC Converter
? Low Side Notebook
? Thermal Resistance
? Junction-to-Ambient Thermal Resistance
? Junction-to-Case
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