FDS6676AS

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Mfr.Part #
FDS6676AS
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 14.5A 8SOIC
Stock
12,593
In Stock :
12,593

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Length :
5mm
Threshold Voltage :
1.5V
Contact Plating :
Tin
FET Type :
N-Channel
REACH SVHC :
No SVHC
Power Dissipation-Max :
2.5W Ta
Turn-Off Delay Time :
43 ns
Continuous Drain Current (ID) :
14.5A
Number of Pins :
8
Weight :
130mg
Element Configuration :
Single
Turn On Delay Time :
10 ns
Number of Terminations :
8
Radiation Hardening :
No
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Packaging :
Tape and Reel (TR)
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Current - Continuous Drain (Id) @ 25°C :
14.5A Ta
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
3V @ 1mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Surface Mount
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
Resistance :
6mOhm
JESD-609 Code :
e4
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Terminal Position :
Dual
Gate to Source Voltage (Vgs) :
20V
Power Dissipation :
2.5W
Series :
PowerTrench®, SyncFET™
Width :
4mm
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
63nC @ 10V
Factory Lead Time :
18 Weeks
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
2510pF @ 15V
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
6m Ω @ 14.5A, 10V
Drain to Source Breakdown Voltage :
30V
Fall Time (Typ) :
29 ns
ECCN Code :
EAR99
Height :
1.5mm
Pbfree Code :
yes
Number of Elements :
1
Rise Time :
12ns
Terminal Form :
Gull wing
Vgs (Max) :
±20V
Datasheets
FDS6676AS
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS6676AS from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Number of Terminations:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, FDS6676AS pinout, FDS6676AS datasheet PDF, FDS6676AS amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS6676AS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS6676AS


N-Channel Tape & Reel (TR) 6m Ω @ 14.5A, 10V ±20V 2510pF @ 15V 63nC @ 10V 8-SOIC (0.154, 3.90mm Width)

FDS6676AS Description


In synchronous DC:DC power supply, the FDS6676AS is intended to replace a single SO-8 MOSFET and Schottky diode. With a low RDS(ON) and low gate charge, this 30V MOSFET is designed to maximize power conversion efficiency. Using ON Semiconductor's monolithic SyncFET technology, the FDS6676AS has an inbuilt Schottky diode.

FDS6676AS Features



? 14.5 A, 30 V. RDS(ON) max= 6.0 m? @ VGS = 10 V

RDS(ON) max= 7.25 m? @ VGS = 4.5 V

? Includes SyncFET Schottky body diode

? Low gate charge (45nC typical)

? High performance trench technology for extremely low RDS(ON) and fast switching

? High power and current handling capability

? RoHS compliant





FDS6676AS Applications



? DC/DC Converter

? Low Side Notebook

? Thermal Resistance

? Junction-to-Ambient Thermal Resistance

? Junction-to-Case
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