FDS6673AZ
- Mfr.Part #
- FDS6673AZ
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 14.5A 8SOIC
- Stock
- 6,372
- In Stock :
- 6,372
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Pin Count :
- 8
- Surface Mount :
- yes
- Drain Current-Max (Abs) (ID) :
- 14.5A
- Pbfree Code :
- yes
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Terminal Finish :
- MATTE TIN
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PDSO-G8
- Input Capacitance (Ciss) (Max) @ Vds :
- 4.48pF @ 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- COMMERCIAL
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Reach Compliance Code :
- Unknown
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 7.2m Ω @ 14.5A, 10V
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 14.5A Ta
- Number of Terminations :
- 8
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Drain to Source Voltage (Vdss) :
- 30V
- DS Breakdown Voltage-Min :
- 30V
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- P-Channel
- Vgs (Max) :
- ±25V
- Drain-source On Resistance-Max :
- 0.0072Ohm
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Series :
- PowerTrench®
- Gate Charge (Qg) (Max) @ Vgs :
- 118nC @ 10V
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 2.5W Ta
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- FDS6673AZ

P-Channel Tape & Reel (TR) 7.2m Ω @ 14.5A, 10V ±25V 4.48pF @ 15V 118nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
FDS6673AZ Overview
The maximum input capacitance of this device is 4.48pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 14.5A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
FDS6673AZ Features
a 30V drain to source voltage (Vdss)
FDS6673AZ Applications
There are a lot of Rochester Electronics, LLC
FDS6673AZ applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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