FDS6670AS
- Mfr.Part #
- FDS6670AS
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 1,324
- In Stock :
- 1,324
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 13.5A, 10V
- Width :
- 4mm
- Factory Lead Time :
- 18 Weeks
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 1540pF @ 15V
- Contact Plating :
- Tin
- Current - Continuous Drain (Id) @ 25°C :
- 13.5A Ta
- Voltage - Rated DC :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Current Rating :
- 13.5A
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Number of Terminations :
- 8
- Number of Elements :
- 1
- Turn On Delay Time :
- 10 ns
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Number of Pins :
- 8
- JESD-609 Code :
- e4
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Height :
- 1.5mm
- Published :
- 2005
- Pbfree Code :
- yes
- Length :
- 5mm
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Position :
- Dual
- Series :
- PowerTrench®, SyncFET™
- Power Dissipation-Max :
- 2.5W Ta
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 5ns
- Resistance :
- 9mOhm
- Drain to Source Breakdown Voltage :
- 30V
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 13.5A
- Turn-Off Delay Time :
- 27 ns
- Weight :
- 130mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 2.5W
- Fall Time (Typ) :
- 18 ns
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Datasheets
- FDS6670AS
FDS6670AS Documents

N-Channel Tape & Reel (TR) 9m Ω @ 13.5A, 10V ±20V 1540pF @ 15V 38nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS6670AS Description
The FDS6670AS from ON Semiconductor is intended to replace a single SO-8 MOSFET and Schottky diode in a synchronous DC: DC power supply. This 30V MOSFET is intended to maximize power conversion efficiency by having a low RDS(ON) and gate charge. Using ON Semiconductor's monolithic SyncFET technology, the FDS6670AS has an inbuilt Schottky diode.
FDS6670AS Features
-
Includes SyncFET Schottky body diode
-
Low gate charge (27nC typical)
-
High-performance trench technology for extremely low RDS(ON) and fast switching
-
High power and current handling capability
-
13.5A, 30V
-
RDS(on) = 9.0mΩ @ VGS = 10V
-
RDS(on) = 11.5mΩ @ VGS = 4.5V
-
RoHS Compliant
FDS6670AS Applications
DC/DC Converters
Low Side Notebook
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