FDS6630A

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Mfr.Part #
FDS6630A
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 6.5A 8SOIC
Stock
48,149
In Stock :
48,149

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Width :
3.9mm
Voltage - Rated DC :
30V
Resistance :
38mOhm
FET Type :
N-Channel
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
30V
Length :
4.9mm
Threshold Voltage :
1.7V
Additional Feature :
LOGIC LEVEL COMPATIBLE
Number of Elements :
1
Series :
PowerTrench®
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
3V @ 250µA
Terminal Position :
Dual
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
6.5A
Number of Pins :
8
Current Rating :
6.5A
Element Configuration :
Single
Transistor Element Material :
SILICON
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Published :
1999
Number of Terminations :
8
Input Capacitance (Ciss) (Max) @ Vds :
460pF @ 15V
Current - Continuous Drain (Id) @ 25°C :
6.5A Ta
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Weight :
130mg
Dual Supply Voltage :
30V
REACH SVHC :
No SVHC
Power Dissipation-Max :
2.5W Ta
Operating Mode :
ENHANCEMENT MODE
Pbfree Code :
yes
Turn-Off Delay Time :
17 ns
Mounting Type :
Surface Mount
Mount :
Surface Mount
Rds On (Max) @ Id, Vgs :
38m Ω @ 6.5A, 10V
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
2.5W
Terminal Finish :
Tin (Sn)
Fall Time (Typ) :
13 ns
Packaging :
Tape and Reel (TR)
Terminal Form :
Gull wing
Gate to Source Voltage (Vgs) :
20V
JESD-609 Code :
e3
Radiation Hardening :
No
Turn On Delay Time :
5 ns
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Rise Time :
8ns
Gate Charge (Qg) (Max) @ Vgs :
7nC @ 5V
Nominal Vgs :
1.7 V
Factory Lead Time :
18 Weeks
Height :
1.575mm
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
FDS6630A
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS6630A from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Number of Terminations:8, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), FDS6630A pinout, FDS6630A datasheet PDF, FDS6630A amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS6630A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS6630A


N-Channel Tape & Reel (TR) 38m Ω @ 6.5A, 10V ±20V 460pF @ 15V 7nC @ 5V 8-SOIC (0.154, 3.90mm Width)

FDS6630A Description


In order to reduce on-state resistance while maintaining exceptional switching performance, this N-Channel Logic Level MOSFET is made using the cutting-edge PowerTrench technology. Low in-line power loss and quick switching are required in low voltage and battery-powered applications, which are well suited for these devices.



FDS6630A Features


  • 6.5 A, 30 V

  • RDS(on) = 0.038 Ω@ VGS = 10 V

  • RDS(on) = 0.053 Ω @ VGS = 4.5 V

  • Low gate charge (5nC typical)

  • Fast switching speed

  • High performance trench technology for extremely low RDS(ON)

  • High power and current handling capability



FDS6630A Applications


  • This product is general usage and suitable for many different applications.

  • DC/DC Converters

  • Load Switch

  • Motor Drives


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