FDS6609A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.032Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

MATTE TIN

FET Type :

P-Channel

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

6.3A

DS Breakdown Voltage-Min :

30V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

6.3A Ta

Series :

PowerTrench®

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

COMMERCIAL

Transistor Element Material :

SILICON

Power Dissipation-Max :

2.5W Ta

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Pin Count :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

8

Vgs(th) (Max) @ Id :

3V @ 250µA

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

930pF @ 15V

JESD-30 Code :

R-PDSO-G8

Transistor Application :

SWITCHING

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

32m Ω @ 7A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant